
A multichannel reflectance anisotropy spectrometer for epitaxial growth monitoring. Reflectance-difference spectroscopy as a probe for semiconductor epitaxial growth monitoring.

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Lastras-Martínez, "Reflectance Difference Spectroscopy as an optical probe for the in situ determination of doping levels in GaAs", MEP 2006, 7-11 November 2006, Guanajuato, Guanajuato, México.Ī. Lastras Martínez "Giant reflectance anisotropy of polar cubic semiconductors in the far infrared". San Luís Potosíĭoctorado en Ciencias Aplicadas con especialidad en Fotónica. 2003-2008 Instituto de Investigación en Comunicación Optica, UASLP. Maestría en Ciencias Aplicadas con especialidad en Fotónica. Educación Profesional en Ingeniería Mecánica 1998-2002.
